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Ti:Sapphire Crystals

Ti:Sapphire Crystals

Ti:Sapphire crystal is the most widely used tunable solid-state laser material combining the supreme physical and optical properties with the extremely broad lasing range.  Its lasing bandwidth can support pulses < 10 fs making it the crystal of choice for femtosecond mode-locked oscillators and amplifiers.  The absorption band of Ti:Sapphire centers at ~ 490 nm so it may be conveniently pumped by various laser sources such as argon ion lasers or frequency doubled Nd:YAG, Nd:YLF, Nd:YVO4 lasers at ~ 530 nm.

We can provide Ti:Sapphire crystals with the faces flat cut and broadband AR coated @ 800 nm.  The ends can also be cut at the Brewster angle to eliminate the reflection loss.

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Product Compare (0)
Model Name doping end_cut application Price Availability Action
TIS3100S-D020-B Ti:Sapphire crystal, 3.0 x 3.0 x 10mm, Ti doping 0.20% (wt.), a-cut, Brewster ends 0.2% Ti Brewster ends Ask Out Of Stock
TIS3150S-D020-B Ti:Sapphire crystal, 3.0 x 3.0 x 15mm, Ti doping 0.20% (wt.), a-cut, Brewster ends 0.2% Ti Brewster ends Ask Out Of Stock
TIS4150S-D020-B Ti:Sapphire crystal, 4.0 x 4.0 x 15mm, Ti doping 0.20% (wt.), a-cut, Brewster ends 0.2% Ti Brewster ends Ask Out Of Stock
TIS3250-D010-B Ti:Sapphire crystal, Dia 3.0 x 25mm, Ti doping 0.10% (wt.), a-cut, Brewster ends 0.1% Ti Brewster ends Ask Out Of Stock
TIS4150-D015-B Ti:Sapphire crystal, Dia 4.0 x 15mm, Ti doping 0.15% (wt.), a-cut, Brewster ends 0.15% Ti Brewster ends Ask
TIS3100-D020-AR800 Ti:Sapphire crystal, Dia 3.0 x 10mm, Ti doping 0.20% (wt.), a-cut, AR@800nm 0.2% Ti Flat cut, AR@800nm TiS THG Ask Out Of Stock
TIS4100-D02-AR800 Ti:Sapphire crystal, Dia 4.0 x 10mm, Ti doping 0.20% (wt.), a-cut, AR@800nm 0.2% Ti Flat cut, AR@800nm 1 Ask Out Of Stock
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Basic Properties:
 

Chemical formula

Ti3+:Al2O3

Crystal structure

Hexagonal a=4.758, c=12.991

Density

3.98 g/cm3

Melting point

2040 oC

Mohs hardness

9

Thermal conductivity

52 W/m/K

Laser action

4-level vibronic

Fluorescence lifetime

3.2 µs (T=300 K)

Tuning range

660 - 1050 nm

Absorption range

400 - 600 nm

Emission peak

795 nm

Absorption peak

488 nm

Refractive index

1.76 @ 800 nm


Absorption Coefficient vs. Ti Doping Level:


Specifications on Ti:Sapphire Products:
 

Orientation:   

a-cut with the rod axis normal to the optical axis (c-axis).
c-cut available upon request.

Titanium (Ti) doping:   

0.06 - 0.25% (Weight Percentage, wt%) 

Figure of Merit (FOM):  

> 250 or 150 depending on the doping level    

End configurations:   

Flat/Flat or Brewster/Brewster ends

Flatness:   

λ/10 @ 633 nm

Parallelism:   

20 arc sec

Surface finishing:   

10/5 scratch/dig to MIL-O-13830A   

Wavefront distortion:   

<  λ/4 per inch